首页   按字顺浏览 期刊浏览 卷期浏览 Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switch...
Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches

 

作者: A. G. Markelz,   E. J. Heilweil,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 18  

页码: 2229-2231

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121329

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by a factor of 3 from room temperature to 150 K for low biases and 100 K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered. ©1998 American Institute of Physics.

 

点击下载:  PDF (98KB)



返 回