Titanium silicide as a diffusion source for arsenic
作者:
V. Privitera,
F. La Via,
E. Rimini,
G. Ferla,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 11
页码: 7174-7176
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344550
出版商: AIP
数据来源: AIP
摘要:
The matter transport of arsenic ions implanted into titanium silicide layers has been investigated after thermal diffusion treatment in the 800 °C–1100 °C temperature range. The arsenic atoms redistribute between TiSi2and Si with a segregation coefficient depending on temperature. The diffused amount increases linearly with the square root of annealing time at 1100 °C. Then‐doped shallow Si layer has a quite good electrical activity with a mean resistivity of about 1.2 M&OHgr; cm. The leakage current of the reverse‐biasedn+/pjunction is instead quite high. Stacking faults are observed in the diffused layer.
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