Distribution of nitrogen in thermally nitrided SiO2
作者:
Yutaka Yoriume,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 1
页码: 67-71
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582544
出版商: American Vacuum Society
关键词: silica;silicon;nitridation;ammonia;auger electron spectroscopy;films;oxidation;etching;infrared spectra;nitrogen;spatial distribution;temperature effects;thickness;quantity ratio;very high temperature
数据来源: AIP
摘要:
Thermally oxidized SiO2films on silicon wafers were directly thermally nitrided by heating in an anhydrous ammonia gas ambient. The nitrided film was studied by Auger electron spectroscopy, infrared spectroscopy, and etching rate measurements. It was found by AES measurement that nitrogen permeates through SiO2films even as thick as 1000 Å, if nitrided at 900 to 1100 °C, and that it distributes throughout the film. At the silicon interface, a nitrogen pileup was observed. Results of infrared spectroscopy and etching rate measurements confirmed the AES measurements.
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