Hole transport over heterobarriers in InP based multiple quantum well structures
作者:
C. Knorr,
T. Riedl,
M. Geiger,
F. Scholz,
A. Hangleiter,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 11
页码: 1323-1325
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120982
出版商: AIP
数据来源: AIP
摘要:
We present a systematic analysis of the hole transport over heterobarriers in the InGaAs(P)/InP material system. The experiments have been performed on our recently developed all-optical switching structures [C. Knorr &etal;, Appl. Phys. Lett.69, 4212 (1996)], which offer an elegant access to hole transport rates. We have varied barrier thickness, barrier height, bias voltage, and temperature. The time constants vary from 30 &mgr;s to 30 ns. Our model calculations, including all heavy and light hole subbands, show that only thermally assisted tunneling can explain both the temperature and electric field dependence of the transport rates. We have extracted the activation energies. The hole capture time is determined as250±50 fs.©1998 American Institute of Physics.
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