Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy
作者:
T. H. Myers,
J. F. Schetzina,
T. J. Magee,
R. D. Ormond,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1983)
卷期:
Volume 1,
issue 3
页码: 1598-1603
ISSN:0734-2101
年代: 1983
DOI:10.1116/1.572275
出版商: American Vacuum Society
关键词: cadmium tellurides;surface treatments;etching;reflectivity;x−ray diffraction;transmission electron microscopy;morphology;molecular beam epitaxy
数据来源: AIP
摘要:
A systematic study of CdTe film growth by molecular beam epitaxy (MBE) on hydroplaned (111)A and (111)B CdTe substrates is discussed. Substrate preparation prior to growth involved chemical etching techniques, rather than sputtering in UHV, in order to maintain the integrity of the hydroplaned surface. A range of substrate temperature during growth was investigated. X‐ray diffraction, UV reflection, and transmission electron diffraction measurements were employed to evaluate the structural quality of the CdTe films. Bright and dark field transmission electron microscopy was used to determine film dislocation densities. An entirely different film growth morphology was observed on the (111)A versus (111)B substrate surfaces for the range of temperatures and growth rate employed. Growth of high quality, low dislocation density, twin‐free CdTe films was achieved on hydroplaned (111)A CdTe substrates at 250 °C.
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