Atomic force microscope images reveal a root-mean-square roughness&Dgr;d=16 nmfor InGaN/GaN double-heterostructure laser structures with cleaveda-plane facets. Thec-plane sapphire substrate cleaves cleanly along both theaandmplanes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor ofe−16&pgr;2(n&Dgr;d/&lgr;0)2,wherenis the refractive index of the semiconductor and&lgr;0is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV. ©1998 American Institute of Physics.