Impact ionization in the presence of strong electric fields in silicon dioxide
作者:
J.N. Bradford,
S. Woolf,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1991)
卷期:
Volume 117,
issue 1-3
页码: 227-233
ISSN:1042-0150
年代: 1991
DOI:10.1080/10420159108220618
出版商: Taylor & Francis Group
关键词: electron;acoustic phonon;impact ionization;silicon dioxide;Monte Carlo;transport
数据来源: Taylor
摘要:
This paper reports the results of Monte Carlo transport calculations for electrons in strong electric fields in silicon dioxide based on new choices for the deformation potential in acoustic phonon scatter and for the ionization threshold. Impact ionization is described on the basis of cross sections derived from many body dielectric theory coupled to a model insulator. The electron-acoustic and electron-elastic scattering rates are matched at 8 eV in order to provide appropriate limitation on the electron-phonon scattering. The sensitivity of secondary electron production to these parameters is described. Also described is the important role of bulk trapped negative charge in affecting secondary electron production by changing the local field value. The results show that suitable choices for these parameters lead to appropriate levels of impact ionization and vacuum emission spectra.
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