We report here fabrication of a super‐Schottky diode on GaAs using a novel structure. This device takes advantage of the reverse‐beveled walls of anisotropically etched GaAs. The reverse‐beveled edge acts as a shadow mask to a direct‐line evaporation of the superconducting electrodes. The controllable etch rate of the GaAs etching solution (H2O, H2O2, and H2SO48:1:1) allows for the definition of a small critical geometry (submicron) in the vertical direction without the need of electron beam lithography, or any other fine lithography system. The small critical geometry between superconducting electrodes is necessary for reduction of the parasitic‐substrate resistance.