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Gas-source molecular beam epitaxy growth of an 8.5 &mgr;m quantum cascade laser

 

作者: S. Slivken,   C. Jelen,   A. Rybaltowski,   J. Diaz,   M. Razeghi,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 18  

页码: 2593-2595

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119338

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate preliminary results for an 8.5 &mgr;m laser emission from quantum cascade lasers grown in a single step by gas-source molecular beam epitaxy. 70 mW peak power per two facets is recorded for all devices tested at 79 K with 1 &mgr;s pulses at 200 Hz. For a 3 mm cavity length, lasing persists up to 270 K with aT0of 180 K. ©1997 American Institute of Physics.

 

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