Strained‐layer interfaces between II–VI compound semiconductors
作者:
Chris G. Van de Walle,
Khalid Shahzad,
Diego J. Olego,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1350-1353
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584263
出版商: American Vacuum Society
关键词: INTERFACE STATES;PHOTOLUMINESCENCE;RAMAN SPECTROSCOPY;ZINC SULFIDES;ZINC SELENIDES;ZINC TELLURIDES;CADMIUM TELLURIDES;MERCURY TELLURIDES;CONDUCTION BANDS;ENERGY GAP;MULTILAYERS;ZnSe;Zn(S,Se);CdTe;ZnS;HgT
数据来源: AIP
摘要:
II–VI multilayer structures are eminently suitable for various optoelectronic devices covering from the infrared to the ultraviolet spectral range. We present a theoretical study of the band lineups at interfaces involving ZnS, ZnSe, ZnTe, CdTe, and HgTe based on the ‘‘model solid’’ theory. We also experimentally investigate the strains and band offsets in ZnSe/ZnSxSe1−xstrained‐layer superlattices, using Raman and photoluminescence spectroscopy. The conduction‐band offset at such interfaces is found to be small. Theoretical predictions for other interfaces include a large type‐II offset in ZnSe/ZnTe, and a small average valence‐band discontinuity in ZnTe/CdTe.
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