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Electron‐beam‐heated solid source for carbon doping in GaAs and AlGaAs alloys grown by molecular‐beam epitaxy

 

作者: John F. Walker,   Lucia Sorba,   Silvano De Franceschi,   Fabio Beltram,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 2  

页码: 287-289

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588366

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;CARBON ADDITIONS;DOPED MATERIALS;MOLECULAR BEAM EPITAXY;ATOMIC BEAM SOURCES;ELECTRON BEAMS;PHOTOLUMINESCENCE;CARRIER DENSITY;MORPHOLOGY;SIMS;GaAs:C;(Al,Ga)As:C

 

数据来源: AIP

 

摘要:

A wide range of carbon doping in molecular‐beam‐epitaxy‐grown GaAs and AlGaAs alloys was obtained by means of a new electron‐beam heated solid source. Free hole concentrations from low 1015cm−3to over 1×1020cm−3were reproducibly obtained in GaAs and in direct‐gap AlxGa1−xAs while maintaining good surface morphology. These results extend the doping range in both directions with respect to commercial solid carbon sources. High activation percentage, negligible memory effects and diffusion were demonstrated via secondary ion mass spectrometer and photoluminescence measurements.

 

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