首页   按字顺浏览 期刊浏览 卷期浏览 Deep etch x‐ray lithography at the advanced light source: First results
Deep etch x‐ray lithography at the advanced light source: First results

 

作者: Chantal Khan Malek,   Keith Jackson,   Reid A. Brennen,   Michael H. Hecht,   William D. Bonivert,   Jill Hruby,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1994)
卷期: Volume 12, issue 6  

页码: 4009-4012

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587420

 

出版商: American Vacuum Society

 

关键词: ADVANCED LIGHT SOURCE;USES;SYNCHROTRON RADIATION;X RADIATION;ETCHING;ASPECT RATIO;ACRYLATES

 

数据来源: AIP

 

摘要:

Deep etch x‐ray lithography permits the manufacture of very accurate high‐aspect‐ratio microstructures, which can be used as master templates for subsequent replication by electroforming and/or molding processes. This allows for mass production of three‐dimensional microstructures in a variety of materials. In this article we report on the first results using x rays from the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory, as well as on the processing and technology developed to produce high‐aspect‐ratio microstructures. The first masks used were simple stencil masks chemically or laser etched in thick metal sheets. For resist, we used commercial acrylic cast sheets. Microstructures 840 μm thick were fabricated by deep x‐ray lithography and used as templates for copper electroforming. A technology for the high contrast masks required to work at these short wavelengths is being developed and a deep etch x‐ray lithography facility is under construction at the ALS.

 

点击下载:  PDF (400KB)



返 回