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Some Properties ofp‐nJunctions in GaP

 

作者: H. G. Grimmeiss,   A. Rabenau,   H. Koelmans,  

 

期刊: Journal of Applied Physics  （AIP Available online 1961）
卷期: Volume 32, issue 10  

页码: 2123-2127

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1777028

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new method in making single crystals of GaP and the preparation of diodes is described. Thep‐nluminescence and photoluminescence of undoped and Zn‐doped GaP are investigated and the light output of thep‐nluminescence as a function of temperature and excitation density is discussed. The spectral sensitivity of thep‐nphotovoltaic effect is recorded.

 

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