We examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (<10 ppmH2O)N2heat treatment, and after standard (approximately 50 ppmH2O) Ar annealing. A center is observed following dry heat treatment at temperatures greater than 800 °C. This center is passivated by standard Ar annealing at temperatures greater than 700 °C and regenerated after subsequent dry heat treatment. We suggest that this defect is related to an unpaired electron on a carbon atom created by the release of a hydrogen-related species. ©1997 American Institute of Physics.