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Photoluminescence of nitrogen (N)‐implanted and N‐free In0.30Ga0.70P grown by liquid phase epitaxy

 

作者: Akira Fujimoto,   Yunosuke Makita,   Hidetoshi Nojiri,   Toshihiko Kanayama,   Toshio Tsurushima,   Jun‐ichi Shimada,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 7  

页码: 3987-3989

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.328184

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence (PL) studies were performed at 2 K for nitrogen (N)‐implanted and N‐free In0.30Ga0.70P crystals, which were grown by a step‐cooling liquid‐phase‐epitaxial method. For the N‐implanted In0.30Ga0.70P, an isoelectronic trap was found to be formed at annealing temperature over 600 °C. The binding energy of the excitons bound to the above traps was determined to be 92 meV from the temperature dependence of the PL spectra.

 

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