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Power devices in gallium arsenide

 

作者: C.J.Atkinson,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  （IET Available online 1985）
卷期: Volume 132, issue 6  

页码: 264-271

 

年代: 1985

 

DOI:10.1049/ip-i-1.1985.0059

 

出版商: IEE

 

数据来源: IET

 

摘要:

The use of gallium arsenide for power devices has recently been the subject of a number of papers. The paper examines the properties of gallium arsenide relevant to power device behaviour together with published results on power devices made in gallium arsenide.

 

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