首页   按字顺浏览 期刊浏览 卷期浏览 Long‐lifetime high‐intensity GaAs photosource
Long‐lifetime high‐intensity GaAs photosource

 

作者: R. Calabrese,   G. Ciullo,   V. Guidi,   G. Lamanna,   P. Lenisa,   B. Maciga,   L. Tecchio,   B. Yang,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1994）
卷期: Volume 65, issue 2  

页码: 343-348

 

ISSN:0034-6748

 

年代: 1994

 

DOI:10.1063/1.1145194

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We used a GaAs crystal operating in a negative electron affinity mode to produce an intense continuous electron beam by photoemission. The major drawback of photoemission from GaAs, i.e., rapid current decay, was overcome without continuously supplying cesium. After a little initial decay, the current remained constant at 1 mA over a few mm2, with no degradation. Seasoning of the vacuum chamber played a fundamental role in achieving this performance.

 

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