AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer
作者:
Ching-Hui Chen,
James P. Ibbetson,
Evelyn L. Hu,
Umesh K. Mishra,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 4
页码: 494-496
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119608
出版商: AIP
数据来源: AIP
摘要:
We have successfully used a thin layer (∼200 Å) of annealed low-temperature GaAs (LT-GaAs) to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Compared to structures without an ion damage blocking layer, the devices with a thin layer of LT-GaAs are more robust against ion damage. This is important for the application of ion-assisted processing to the fabrication of electronic devices, such as dry etching used to achieve gate recessing. ©1997 American Institute of Physics.
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