Quantum confinement and strain effects in ZnSe‐ZnSxSe1−xstrained‐layer superlattices
作者:
K. Mohammed,
D. J. Olego,
P. Newbury,
D. A. Cammack,
R. Dalby,
H. Cornelissen,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 25
页码: 1820-1822
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97708
出版商: AIP
数据来源: AIP
摘要:
A photoluminescence study of ZnSe‐ZnSxSe1−xstrained‐layer superlattices withx=0.19 grown by molecular beam epitaxy is presented. We observe clear shifts of the excitons to higher energies as the well widths are reduced. These shifts are interpreted in terms of quantum confinement effects using the envelope function approach and the strain‐induced effects using the deformation potential theory. From our analysis we conclude that most of the band offsets between ZnSe‐ZnSxSe1−xare taken up by the valence bands.
点击下载:
PDF
(357KB)
返 回