Fabrication of double‐gated Si field emitter arrays for focused electron beam generation
作者:
Junji Itoh,
Yasushi Tohma,
Kazutoshi Morikawa,
Seigo Kanemaru,
Keizo Shimizu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 5
页码: 1968-1972
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588116
出版商: American Vacuum Society
关键词: BEAM CURRENTS;ELECTRON SOURCES;FABRICATION;FIELD EMISSION;FOCUSING;SILICON;STABILITY;Si
数据来源: AIP
摘要:
Double‐gated Si field emitter arrays (FEAs) capable of generating focused electron beams were fabricated and experimentally evaluated. The present field emitter array has a vertical triode structure consisting of a conical Si tip and two gate openings (upper and lower) surrounding the tip. The lower gate with a 2‐μm‐diam opening acts as an extraction electrode controlling the emission current, and the upper one with a 3‐μm‐diam opening acts as an electrostatic lens focusing the electron trajectories. The focusing property was evaluated by observing the spot size of a phosphor (ZnO:Zn) screen located about 20 mm apart from the field emitter array and biased to 1 kV. It was found from experimental results that decreasing the upper gate voltage (VF) down to a few volts was quite effective to generate focused electron beams. AtVFof about 4 V, the electrons emitted from the tip were well collimated and a beam current of about 0.1 nA/tip was obtained.
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