Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface
作者:
W. Weiss,
R. Hornstein,
D. Schmeisser,
W. Göpel,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 4
页码: 715-723
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584986
出版商: American Vacuum Society
关键词: INDIUM PHOSPHIDES;CALCIUM FLUORIDES;INTERFACE STRUCTURE;ELECTRONIC STRUCTURE;PHOTOELECTRON SPECTROSCOPY;ULTRAVIOLET RADIATION;X RADIATION;SURFACE RECONSTRUCTION;ELECTRON DIFFRACTION;EPITAXY;ULTRAHIGH VACUUM;CaF2;InP
数据来源: AIP
摘要:
In low‐energy electron diffraction (LEED), we find two different reconstructions of the technologically important InP(001) surface, the well known (4×2) structure and a high temperature (4×2) structure with streaks at the half order spot positions which is interpreted as a disorderedc(8×2) structure. The corresponding electronic structures were investigated by ultraviolet photoelectron spectroscopy (UPS) and x‐ray photoelectron spectroscopy (XPS). For both types of reconstructions, we observe a surface state emission at the valence‐band maximum and a strong fermi‐level pinning. CaF2was deposited onto these surfaces, and the interface formation was studied by LEED, UPS, and XPS. The overlayer grows epitaxially with (001) orientation of its bulk fluorite structure inspite of the large lattice mismatch of 7.5%. The electronic interface scheme with its valence‐band discontinuity was deduced from photoemission measurements as a function of overlayer coverage. Band bending at the interface results fromp‐type defects.
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