The gamma irradiation damage in silicon has been extensively studied by many investigators.(1–6)However, little has been reported about the effects of radiation on the current-voltage (I–V) characteristics of silicon, particularly of high-resistivity silicon at radiation temperatures other than the room temperature. This paper is a report of some new results on the I–V characteristics of low and high resistivity silicon before and after gamma irradiation at the temperature of 38 °C and −196 °C.