The lattice disorder produced in germanium by 56keV boron-ion bombardment has been measured using the channeling-effect technique. The dependence on dose (1014-1016ions/cm2) and implantation temperature (−90 °C to +130°C) has been studied. It is found that at room-temperature, each incident boron ion creates −10 times more disorder in germanium than in silicon. It is remarked that, contrary to the present results, previously established anneal stages generally occur at significantly lower temperatures in germanium than in silicon.