Growth of epitaxial films of CdTe and (Cd,Mn)Te on GaAs substrates
作者:
T. Siegrist,
Armin Segmu¨ller,
H. Mariette,
F. Holtzberg,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 20
页码: 1395-1397
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96920
出版商: AIP
数据来源: AIP
摘要:
Epitaxial films of CdTe and (Cd,Mn)Te were grown on (001) GaAs substrates in a vacuum evaporator. Conventional Bragg diffraction indicated that the films had a single orientation, either (a) CdTe(001) ∥ GaAs(001), or (b) CdTe(111) ∥ GaAs(001). Grazing‐incidence x‐ray diffraction showed that most of the films had both orientations with (a) CdTe[110] ∥ GaAs[110] and (b) CdTe[112¯] ∥ GaAs[110]. Only one of the two possible domains was found in case (b). A mosaic of well‐crystallized islands appears to accommodate the large film strain of −12.8% due to the lattice mismatch between CdTe and GaAs.
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