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Development of a wafer level technique for monitoring and control of deposition temperature in high-vacuum physical vapor deposition technology

 

作者: R. Wilson,   T. Hulseweh,   W. Krolikowski,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1997）
卷期: Volume 15, issue 1  

页码: 122-126

 

ISSN:1071-1023

 

年代: 1997

 

DOI:10.1116/1.589236

 

出版商: American Vacuum Society

 

关键词: Si;Al;Ti

 

数据来源: AIP

 

摘要:

Deposition temperatures in the range of 500 °C are required for aluminum via fill planarization processes. The control of the deposition temperature is a critical factor in achieving consistent via fill planarization. A wafer level technique was developed and proven to be consistent through the operating temperature range to highlight any deviation in the deposition temperature.

 

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