The controllability of PZT film properties and the possibility of the scaling up the MOCVD to the commercial based production were briefly reviewed. The film composition and crystalline phase of the PZT films were easily controlled using the MOCVD process. The electrical properties were also controlled by changing the growth parameters. A low processing temperature was achieved using a new Pb precursor, tryethyl n-pentoxy lead. Large area growth of PZT and PLZT films on a 6–8 inch wafer was also achieved.