Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si diodes
作者:
Salvatore Coffa,
Giorgia Franzo`,
Francesco Priolo,
Andrea Pacelli,
Andrea Lacaita,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 1
页码: 93-95
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121791
出版商: AIP
数据来源: AIP
摘要:
We provide direct evidence that Er ions incorporated in the depletion layer of ap+–n+Si junction are efficiently pumped through an impact excitation process with hot carriers. The carriers were accelerated by the electric field present in the depletion layer after being produced by either Zener breakdown of the junction at ∼5 V or by irradiating the diode with an argon laser. Measurements of the electroluminescence yield at 1.54 &mgr;m as a function of the reverse bias voltage (and for a constant current through the device) reveal that excitation of Er only occurs at voltages above 1 V, demonstrating that impact is the pumping mechanism. Moreover, we have found that Er ions are only excited within ∼15 nm from the edges of the depletion layer leaving a dark, ∼50 nm thick, region in the central part of the depletion region. Monte Carlo calculations confirmed that only close to the depletion layer edges the energy gained by the carriers in the electric field is high enough to impact excite Er. ©1998 American Institute of Physics.
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