首页   按字顺浏览 期刊浏览 卷期浏览 Stimulated and laser emission involving nitrogen isoelectronic impurities in AlxGa1&min...
Stimulated and laser emission involving nitrogen isoelectronic impurities in AlxGa1−xAs (x=0.39, 77 °K)

 

作者: Yunosuke Makita,   Shun‐ichi Gonda,   Hachiro Ijuin,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 5  

页码: 309-311

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89058

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By optical pumping, laser emission was achieved at 77 °K involving those nitrogen atoms in direct‐gap AlxGa1−xAs (x=0.39), which were incorporated by ion implantation. The energy of laser emission of nitrogen‐implanted material was about 14.4 meV lower than that of nitrogen‐free material.

 

点击下载:  PDF (245KB)



返 回