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Photoluminescence of Si‐doped AlAs grown by molecular‐beam epitaxy

 

作者: Kazuhiro Kudo,   Yunosuke Makita,   Toshio Nomura,   Hideki Tanaka,   Michiya Masuda,   Yoshinobu Mitsuhashi,   Tokue Matsumori,   Tomio Izumi,   Toshihiko Kobayashi,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 9  

页码: 3371-3373

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337708

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Low‐temperature photoluminescence (PL) spectra for Si‐doped AlAs grown by molecular‐beam epitaxy is reported for the first time. It is revealed that a sharp emission which is 63 meV below the indirect excitonic band gapEg,ind(X) is related to the Si‐donor level. From the dependence of PL spectra upon Si dosage, it is suggested that a broad emission band which is 135 meV belowEg,ind(X) is due to donor‐acceptor (SiAl‐SiAs) pair recombinations.

 

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