The transport of charge carriers in a multijunction, consisting of alternating thinp‐ andn‐type sublayers of amorphous semiconductor, has been analyzed theoretically. It is shown that the multijunction behaves in the dark like apn‐junction diode, while it has an advantage in reducing range limitation of photogenerated carriers. These properties are realized when the sublayer thickness is of the order of 100 nm for realistic values of doping levels and localized state density.