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Nonrandom doping and elastic scattering of carriers in semiconductors

 

作者: A. F. J. Levi,   S. L. McCall,   P. M. Platzman,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 10  

页码: 940-942

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100814

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to significant suppression of elastic scattering and a consequent enhancement in charge carrier mobility.

 

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