Epilayers of (Alx,Ga1−x)As(0.03<x<0.38) up to 1.4 mm thick were grown for the first time by Peltier‐induced liquid phase epitaxy (LPE) (electro epitaxy). The epilayers were analyzed with photoluminescence microanalysis and showed thick segments (up to 600 &mgr;m) of extremely uniform aluminum composition. Compositionally graded regions varied from lowXSALASto highXSALASin moving from the bottom to the top of the layer. The growth was performed at constant furnace temperature (T = 800 °C), with a small solution volume (15 g) and with an electric current of 10 A/cm2as the sole driving force for the growth. The compatibility of this technique with the growth of complex multilayer structures was demonstrated.