首页   按字顺浏览 期刊浏览 卷期浏览 The structure and composition of rf reactively sputtered MoSxfilms
The structure and composition of rf reactively sputtered MoSxfilms

 

作者: K. Reichelt,   G. Mair,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 3  

页码: 1245-1247

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325014

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Molybdenum sulfide films have been deposited by reactive sputtering of molybdenum in a hydrogen sulfide/argon atmosphere and by sputtering of molybdenum disulfide in pure argon atmosphere at substrate temperatures between room temperature and 480 °C. The structure and composition of the films have been determined as a function of hydrogen sulfide partial pressure and substrate temperature by transmission electron microscopy (TEM) and Rutherford ion backscattering, respectively. The experiments showed that at hydrogen sulfide partial pressures above 2×10−4Torr, MoSxfilms had a rhombohedral structure with 0<x<2.2. The dependence of the film thickness on the hydrogen sulfide partial pressure has been studied. The dependence of the composition on the substrate temperature is interpreted by a different dependence of the sticking coefficient of the components on the temperature.

 

点击下载:  PDF (226KB)



返 回