The structure and composition of rf reactively sputtered MoSxfilms
作者:
K. Reichelt,
G. Mair,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 3
页码: 1245-1247
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325014
出版商: AIP
数据来源: AIP
摘要:
Molybdenum sulfide films have been deposited by reactive sputtering of molybdenum in a hydrogen sulfide/argon atmosphere and by sputtering of molybdenum disulfide in pure argon atmosphere at substrate temperatures between room temperature and 480 °C. The structure and composition of the films have been determined as a function of hydrogen sulfide partial pressure and substrate temperature by transmission electron microscopy (TEM) and Rutherford ion backscattering, respectively. The experiments showed that at hydrogen sulfide partial pressures above 2×10−4Torr, MoSxfilms had a rhombohedral structure with 0<x<2.2. The dependence of the film thickness on the hydrogen sulfide partial pressure has been studied. The dependence of the composition on the substrate temperature is interpreted by a different dependence of the sticking coefficient of the components on the temperature.
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