&bgr;‐SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i‐C4H10/H2/HCl gas system. Stoichiometric &bgr;‐SiC films are obtained with high growth rate at a low temperature of 900 °C. Highly (111) oriented &bgr;‐SiC polycrystal is grown on a Si(111) substrate. Moreover, using the above‐mentioned gas system, &bgr;‐SiC selective growth is attained on a Si substrate, with no nucleation on the SiO2area. This letter discusses thei‐C4H10effects and selective growth condition.