Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice‐matched composition
作者:
Juan Marti´nez‐Pastor,
Luisa Gonza´lez,
Philippe Roussignol,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 15
页码: 2111-2113
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115601
出版商: AIP
数据来源: AIP
摘要:
High structural and optical quality InxGa1−xP/GaAs quantum wells, withxfrom 0.51 to 0.45, have been successfully grown by atomic layer molecular beam epitaxy. In that compositional range, an important blue shift of the quantum well luminescence lines is observed, which is explained by an increase of the conduction band gap offset from compressive to tensile strain conditions. The luminescence intensity decreases with temperature above 20–30 K, which is attributed to impurities located at the interfaces and inside the quantum wells. The influence of the In content on the oscillator strength of the optical transitions is also evaluated. ©1996 American Institute of Physics.
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