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Crystal Habits of GaAs and GaP Grown from the Vapor Phase

 

作者: A. J. Crocker,  

 

期刊: Journal of Applied Physics  （AIP Available online 1962）
卷期: Volume 33, issue 9  

页码: 2840-2842

 

ISSN:0021-8979

 

年代: 1962

 

DOI:10.1063/1.1702561

 

出版商: AIP

 

数据来源: AIP

 

摘要:

GaAs grown from the vapor phase is found, at near equilibrium, to form nearly spherical crystals bounded by {111} and {110} faces. Under nonequilibrium conditions whiskers are formed which on etching can be made to reveal structure.

 

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