The electrical properties of thin‐film CuInSe2(<4 &mgr;m thick) deposited by coevaporation of the elements have been measured by different techniques as a function of material composition. A correlation between the Cu/In and Se/metal ratios versus majority‐carrier concentration is established. A qualitative scheme is developed, based on experiments, which predicts the majority‐carrier type and concentration in relation to the stoichiometry of the material.