Photoluminescence of erbium‐implanted porous silicon is investigated. Room temperature 1.54 &mgr;m Er3+luminescence is observed after annealing. The luminescence spectrum, annealing characteristics, temperature quenching, and the luminescence lifetime suggest that the Er3+luminescence is mediated by photocarriers in the amorphous silicon matrix in porous silicon, and not related to the presence of the crystal nanograins. ©1995 American Institute of Physics.