首页   按字顺浏览 期刊浏览 卷期浏览 Identification of an interstitial carbon‐interstitial oxygen complex in silicon
Identification of an interstitial carbon‐interstitial oxygen complex in silicon

 

作者: J. M. Trombetta,   G. D. Watkins,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 51, issue 14  

页码: 1103-1105

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98754

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeledSi‐G15, is shown to originate from the same carbon‐oxygen complex as does the well studied C‐line photoluminescence spectrum with zero‐phonon line at 0.79 eV. Both thegtensor and the13C hyperfine tensor for this center are remarkably similar to those for the isolated interstitial carbon atom. Stress‐induced alignment experiments reveal the role of oxygen and indicate a unique structure for an interstitial carbon‐interstitial oxygen pair.

 

点击下载:  PDF (326KB)



返 回