Identification of an interstitial carbon‐interstitial oxygen complex in silicon
作者:
J. M. Trombetta,
G. D. Watkins,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 14
页码: 1103-1105
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98754
出版商: AIP
数据来源: AIP
摘要:
An electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeledSi‐G15, is shown to originate from the same carbon‐oxygen complex as does the well studied C‐line photoluminescence spectrum with zero‐phonon line at 0.79 eV. Both thegtensor and the13C hyperfine tensor for this center are remarkably similar to those for the isolated interstitial carbon atom. Stress‐induced alignment experiments reveal the role of oxygen and indicate a unique structure for an interstitial carbon‐interstitial oxygen pair.
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