GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy
作者:
S. K. Haywood,
E. T. R. Chidley,
R. E. Mallard,
N. J. Mason,
R. J. Nicholas,
P. J. Walker,
R. J. Warburton,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 10
页码: 922-924
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100809
出版商: AIP
数据来源: AIP
摘要:
Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X‐ray diffraction on an 80 A˚ single well confirmed the Ga1−xInxSb composition to bex=0.15, for which the lattice mismatch is ≊1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (&rgr;xx) of a four‐period multiquantum well, and the associated quantum Hall effect, indicated that a two‐dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (&ngr;=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.
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