Fabrication of IrSi3/p‐Si Schottky diodes by a molecular beam epitaxy technique
作者:
T. L. Lin,
J. M. Iannelli,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 20
页码: 2013-2015
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103002
出版商: AIP
数据来源: AIP
摘要:
IrSi3/p‐Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current‐voltage characteristics were observed and Schottky barrier heights of 0.14–0.18 eV were determined by activation energy analysis and spectral response measurement.
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