Charging effects in plasma immersion ion implantation for microelectronics
作者:
Shu Qin,
James D. Bernstein,
Zhuofan Zhao,
Wei Liu,
Chung Chan,
Jiqun Shao,
Stuart Denholm,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 5
页码: 1994-1998
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588121
出版商: American Vacuum Society
关键词: COMPUTERIZED SIMULATION;ELECTRIC CHARGES;ION IMPLANTATION;MICROELECTRONICS;PLASMA SHEATH
数据来源: AIP
摘要:
The charging effects of plasma immersion ion implantation (PIII) doping experiments have been investigated using a dynamic sheath model and PDP1 plasma simulation code. When the target has a dielectric film, charge accumulation during PIII can have a profound impact on doping results. Under certain process conditions, it can significantly reduce implant energy and dose and thereby alter the implant profile. In addition, it may degrade device reliability, especially for ultralarge‐scale integrated circuit devices. In order to minimize charging effects, shorter pulse widths along with moderate values of plasma density and pulse potential should be used.
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