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Universal relationship between resonant frequency and damping rate of 1.3 &mgr;m InGaAsP semiconductor lasers

 

作者: R. Olshansky,   P. Hill,   V. Lanzisera,   W. Powazinik,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 11  

页码: 653-655

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98110

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Analysis of the measured frequency response of 1.3 &mgr;m InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10−9s. This result can be explained by the intraband relaxation model of nonlinear gain.

 

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