Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky‐barrier cells
作者:
Amal K. Ghosh,
Don L. Morel,
Tom Feng,
Robert F. Shaw,
Charles A. Rowe,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 1
页码: 230-236
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1662965
出版商: AIP
数据来源: AIP
摘要:
The photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag sandwich cells are reported. At low voltages, the current in the forward direction varies exponentially with voltage. A charge density of[inverted lazy s]1018/cm3is estimated fromC‐Vmeasurements. The short‐circuit photocurrentJsc&agr;Fm(m [inverted lazy s]0.5), whereFis the incident light intensity. The open‐circuit photovoltageVoc&agr; logFas expected for a Schottky barrier orp‐njunction. TheJ‐Vcurve in the photovoltaic mode is characteristic of a cell with large series resistance. From the photovoltaic action spectra, the electron diffusion length is estimated to be[inverted lazy s]1.5×10−6 cm. The action spectrum is dependent on the direction of the incident radiation. A theory is presented which explains the results. The junction is attributed to a Schottky barrier ofVd∼ 0.6 eV and width ∼ 2.5 × 10−6cm estimated fromC‐Vmeasurement. The values determined from photovoltaic measurements are in agreement. The lifetime of electrons is estimated to be ∼ 10−9sec and the mobility ∼ 0.1 cm2/V sec. The quantum efficiency for carrier generation is ∼ 1.5 × 10−3. At 690 nm, with light incident on the Al side, the photovoltaic efficiency is about 0.01%, one of the highest ever reported for organic photovoltaic cells.
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