首页   按字顺浏览 期刊浏览 卷期浏览 InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 &mgr;m high speed p...
InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 &mgr;m high speed photodetectors

 

作者: Jin U. Kang,   Michael Y. Frankel,   Ronald D. Esman,   D. A. Thompson,   B. J. Robinson,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 11  

页码: 1278-1280

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121046

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Simple photoconductive optical detectors for 1.55 &mgr;m wavelength have been fabricated on InGaAsP grown by He-plasma assisted molecular beam epitaxy. Characterization of the photodetectors shows that their speed is determined by the free carrier trapping time, with a full width at half-maximum impulse response of approximately 6 ps. ©1998 American Institute of Physics.

 

点击下载:  PDF (67KB)



返 回