Light‐induced degradation has been investigated in a‐Si alloy p‐i‐n solar cell structures as a function of cell deposition temperature and light intensity. Cells are deposited at temperatures ranging between 200°C to 300°C; degradation has been carried out at intensities up to 50 times AM1.5 illumination at 35°C. The cell charcteristics have been measured under AM1.5, blue and red illuminations. The degradation is found to have a power law dependence on the product of square of generation rate and light‐soaking time. Most cells show saturation in degradation under 50 times AM1.5 illumination beyond 1000 sec, which is equivalent to approximately 800 hours under AM1.5 intensity. However, somes cells showed continued degradation at the high intensity up to 6×104sec without any saturation; the cell properties could be restored to their original values after annealing. Computer simulation studies have been carried out to analyze the results on the basis of existing theories.