Deep levels inp+-njunctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
作者:
L. Quintanilla,
S. Duen˜as,
E. Casta´n,
R. Pinacho,
J. Barbolla,
J. M. Marti´n,
G. Gonza´lez-Dı´az,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 7
页码: 3143-3150
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364348
出版商: AIP
数据来源: AIP
摘要:
In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InPp+-njunctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy (DLTS) and capacitance–voltage transient technique (CVTT). Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which (at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band) result from RTA, while the origin of the other three levels (at 0.46, 0.25, and 0.27 eV below the conduction band) can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels. ©1997 American Institute of Physics.
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