Tunable band offsets in ZnSe/GaAs heterovalent heterostructures grown by metalorganic vapor phase epitaxy
作者:
Mitsuru Funato,
Satoshi Aoki,
Shizuo Fujita,
Shigeo Fujita,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 6
页码: 2984-2989
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366135
出版商: AIP
数据来源: AIP
摘要:
The tunability of band offsets in ZnSe/GaAs(001) heterovalent heterostructures is investigated. The interface composition, Ga/As, is controlled by means of Zn or Se treatment or by thermal etching of the GaAs surfaces before the growth of ZnSe. Consequently, it is revealed by X-ray photoemission spectroscopy that artificial control of Ga/As from 1.0 to 2.8 leads to variation of the valence band offsets from 0.6 to 1.1 eV. Based on the electron counting model and the layer-attenuation model, a structural model which is responsible for the Ga-rich interface and for the increase of valence band offset is proposed, in which the As plane just below the interface consists of As, anti-site Ga and As vacancies. The electronic properties of then-ZnSe/p+-GaAs heterojunction diodes (HDs) provide further evidence of the tunability of the band offsets at the interface, that is, the diffusion potentials in the HDs are modified according to the interface compositions. ©1997 American Institute of Physics.
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