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Ferroelectric capacitor nondestructive readout memory

 

作者: O.Glenn Ramer,   John Drab,   Dave Robinson,   Dick Nishimoto,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1995）
卷期: Volume 11, issue 1-4  

页码: 171-177

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508013589

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

An infinite nondestructive read memory (NDRO) has been developed using a ferroelectric capacitor memory unit cell, the capacitance differential observed between a fully and partially polarized capacitor, a two transistor/two capacitor architecture and a modified latch sense amplifier.

 

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