We calculated the shift of Fermi energyEFwith temperature, using a model density of states for hydrogenated amorphous silicon (a‐Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity &sgr; was calculated from the calculatedEFas a function of temperature. It was found that some features of anomalous transport phenomena ofn‐typea‐Si:H such as kinks or the continuous bending of log &sgr; vs 1/Tcurves and the Meyer–Neldel‐type preexponential factors can be explained, at least in part, by the statistical shift alone.